SSF65R650S2场效应管超致cool mos参数及功能-骊微电子.pdf

SSF65R650S2/SSP65R650S2/SST65R650S2SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 650V N-Channel Super-Junction MOSFET Gen- Description Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features Multi-Epi process SJ-FET 700V TJ = 150 Typ. RDS(on) = 0.55 Ultra Low Gate Charge (typ. Qg = 13.6nC) 100% avalanche testedAbsolute Maximum RatingsAbsolute Maximum Ratings Symbol Symbol Parameter SSP_T65R650S2 Parameter SSP_T65R650S2 SSF65R650S2 SSF65R650S2 UnitUnit VDSS Drain-Source Voltage 650 V ID Drain Current -Continuous (TC = 25)-Continuous (TC = 100)7.8* 4.9* A IDM Drain Current - Pulsed (Note 1) 31.2 A VGSS Gate-Source voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 106 mJ IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.7 A dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns dVds/dt Drain Source voltage slope (Vds=480V) 50 V/ns PD Power Dissipation (TC = 25) 80 30 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum Lead Temperature for Soldering Purpose, 1/16” from Case for 10 Seconds 260 Symbol Symbol Parameter SSP_T65R650S2 Parameter SSP_T65R650S2 SSF65R650S2 SSF65R650S2 UnitUnit RJC Thermal Resistance, Junction-to-Case 1.55 4.2 /W RCS Thermal Resistance, Case-to-Sink Typ. 0.5 - /W RJA Thermal Resistance, Junction-to-Ambient 62 80 /W * Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75.Thermal CharacteristicsThermal Characteristics SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- SSP65R650S2 TO-252 SST65R650S2 SSF65R650S2 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Safe operating area TC=25 TO-220, TO-252 Typ. output characteristics Tj=25 Typical Performance Characteristics Safe operating area TC=25 TO-220FullPAK Typ. transfer characteristics SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Typ. drain-source on-state resistance Typ. gate charge characteristics Typ. capacitances Typical Performance Characteristics Normalized VGS(th) characteristics SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Typical Performance Characteristics Normalized on-resistance vs temperature Forward characteristics of reverse diode Drain-source breakdown voltage SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- Power dissipation 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Max. transient thermal impedance TO-220, TO-252 Typical Performance Characteristics SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- Max. transient thermal impedance TO-220FullPAK 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Coss stored energy Typical Performance Characteristics SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Test circuits Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching times test circuit for inductive load Switching time waveform Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform Test circuits SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Package Outline TO-220 Full PAK SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Package Outline TO-220 COMMON DIMENIONS SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商Package Outline TO-252 SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- 深圳市骊微电子科技有限公司w w w .s z l w t e ch .co m超致MOS供应商SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen-SSF65R650S2/SSP65R650S2/SST65R650S2 650V N-Channel Super-Junction MOSFET Gen- DISCLAIMER SUPER SEMICONDUCTOR reserves the right to make changes WITHOUT further notice to any products herein to improve reliability, function, or design. For documents and material available from this datasheet, SUPER SEMICONDUCTOR does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, SUPER SEMICONDUCTOR hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The products shown herein are not designed for use as critical components in medical, life-saving, or life-sustaining applications, whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 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