7N65L-TC mosfet管-pdf资料-7N65L引脚图--骊微电子.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N65-TCPower MOSFET .tw 1 of 9 Copyright 2019 Unisonic Technologies Co., Ltd QW-R205-424.G 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-TC is a N-channel mode power MOSFET using UTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N65-TC is generally applied in high efficiency switch mode power supplies. FEATURES * RDS(ON) 1.4 VGS=10V, ID=3.5A * High Switching Speed SYMBOL 1.Gate 3.Source 2.Drain TO-251 TO-220 TO-262 1 1 TO-220F 1 1 TO-220F1 1 1 TO-252 1 TO-220F3 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 7N65L-TA3-T 7N65G-TA3-T TO-220 G D S Tube 7N65L-TF1-T 7N65G-TF1-T TO-220F1 G D S Tube 7N65L-TF3-T 7N65G-TF3-T TO-220F G D S Tube 7N65L-TF3T-T 7N65G-TF3T-T TO-220F3 G D S Tube 7N65L-TM3-T 7N65G-TM3-T TO-251 G D S Tube 7N65L-TN3-R 7N65G-TN3-R TO-252 G D S Tape Reel 7N65L-T2Q-T 7N65G-T2Q-T TO-262 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO220F1, TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251, TN3: TO-252, T2Q: TO-262 (3) G: Halogen Free and Lead Free, L: Lead Free 7N65G-TA3-T (1)Packing Type (2)Package Type (3)Green Package 现货现货TEL：13808858392 杜杜S 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 .tw QW-R205-424.G MARKING UTC 7N65 1 L: Lead Free G: Halogen Free Date Code Lot Code 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 9 .tw QW-R205-424.G ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Drain Current Continuous ID 7 A Pulsed (Note 2) IDM 14 A Avalanche Energy Single Pulsed (Note 3) EAS 700 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.3 V/ns Power Dissipation TO-220/TO-262 PD 125 W TO-220F/TO-220F1 TO-220F3 35 W TO-251/TO-252 55 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=100mH, VDD=50V, RG=25, Starting TJ=25 4. ISD 7.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/TO-220F TO-220F1/TO-220F3 TO-262 JA 62.5 C/W TO-251/TO-252 110 C/W Junction to Case TO-220/TO-262 JC 1.0 C/W TO-220F/TO-220F1 TO-220F3 3.57 C/W TO-251/TO-252 2.27 C/W 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 9 .tw QW-R205-424.G ELECTRICAL CHARACTERISTICS (TJ = 25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250A 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 A Gate-Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A 1.4 DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0 MHz 990 pF Output Capacitance COSS 96 pF Reverse Transfer Capacitance CRSS 4.2 pF SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=520V, VGS=10V, ID=7.0A IG=100A (Note 1, 2) 23 nC Gateource Charge QGS 8.4 nC Gate-Drain Charge QGD 4.6 nC Turn-on Delay Time (Note 1) tD(ON) VDS=100V, VGS=10V, ID=7.0A, RG=25 (Note 1, 2) 12 ns Rise Time tR 17.5 ns Turn-off Delay Time tD(OFF) 60 ns Fall-Time tF 27 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 14 A Drain-Source Diode Forward Voltage (Note 1) VSD VGS=0V, IS=7.0A 1.4 V Reverse Recovery Time (Note 1) trr VGS=0V, IS=7.0A, dIF/dt=100A/s (Note1) 424 ns Reverse Recovery Charge Qrr 3.2 C Notes: 1. Pulse Test : Pulse width 300s, Duty cycle 2%. 2. Essentially independent of operating temperature. 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 9 .tw QW-R205-424.G TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDD Driver VGS RG - VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test - + ISD Peak Diode Recovery dv/dt Test Circuit P. W. Period D= VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 9 .tw QW-R205-424.G TEST CIRCUITS AND WAVEFORMS VGS D.U.T. RG VDS RL VDD Pulse Width 1s Duty Factor0.1% VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Switching Test Circuit Switching Waveforms DUT VDS Same Type as D.U.T. VGS Charge QGSQGD QG VGS Gate Charge Test Circuit Gate Charge Waveform D.U.T. RD VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 9 .tw QW-R205-424.G TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain-Source Voltage, VDS (V) Drain-Source On-Resistance vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Gate Charge Characteristics Total Gate Charge, QG (nC) 0 2 4 6 12 10 8 Drain-Source On-Resistance vs. Junction Temperature Junction Temperature, TJ (C) Drain-Source On-Resistance, RDS(ON) () Gate-Source Voltage, VGS (V) Drain-Source On-Resistance Normalized ID=3.5A 7A Breakdown Voltage vs. Junction Temperature Drain-Source Breakdown Voltage Normalized Junction Temperature, TJ (C) Drain Current vs. Drain-Source Voltage VGS=610V Note: 1.TA=25C 2.Pulse test VDS=520V VGS=10V ID=7A Pulsed VGS=10V ID=3.5A Pulsed ID=0.25mA Pulsed Note: 1.TA=25C 2.Pulse test 5.5V Drain-Source Voltage, VDS (V) Capacitance, C (pF) Capacitance Characteristics CISS COSS CRSS 01020304050 255075100125150 1 1000 100 10 5V 4.5V 1.5 2.5 2 1 0.5 0 255075100125150 1.4 1 1.2 0.8 03691215 5 10 0 8 2 4 1 9 7 6 3 0 1 2 5 4 3 4.555.56.5787.56 0510152025 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 8 of 9 .tw QW-R205-424.G TYPICAL CHARACTERISTICS (Cont.) Gate Threshold Voltage vs. Junction Temperature Junction Temperature, TJ (C) Source Current vs. Source-Drain Voltage Source-Drain Voltage, VSD (V) Drain Current vs. Gate-Source Voltage Gate-Source Voltage, VGS (V) Drain Current, ID (A) Gate Threshold Voltage Normalized Source Current, IS (A) Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) () 25C TA=150C Drain-Source On-Resistance vs. Drain Current TA=25C VGS=10V Pulsed TA=25C Pulsed Drain Current vs. Junction Temperature Junction Temperature, TJ (C) Drain Current, ID (A) 255075100125150 ID=0.25mA Pulsed Power Dissipation vs. Junction Temperature Junction Temperature, TJ (C) Power Dissipation, PD (W) 0255075100125150 TO-251 0.9 1.1 1 0.8 0.7 0.6 1 10 0.1 2550751001251500.30.50.70.91.11.3 7 6 2 0 5 4 3 1 0 10 20 30 60 50 40 10.5 3.5 7 0 0246810 2 1 1.5 0.5 025813913712410611 7N65-TC Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 9 of 9 .tw QW-R205-424.G TYPICAL CHARACTERISTICS (Cont.) Drain-Source Voltage, VDS (V) Drain Current, ID (A) 1100010 100 Safe Operating Area 100us MAX TO-251 Operation in this area is limited by RDS(ON) TJ=150C TC=25C Single Pulse 1 10 0.1 0.01 1ms DC 10ms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.