RU2060L N 沟道功率 MOSFET-骊微电子.pdf

RU2060L N-Channel Advanced Power MOSFET FeaturesPin Description 20V/55A, RDS (ON) =3.5m(Typ.)VGS=4.5V RDS (ON) =4.5m(Typ.)VGS=2.5V Low On-Resistance 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO252 Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings SymbolParameterRatingUnit Common Ratings (TC=25C Unless Otherwise Noted) VDSSDrain-Source Voltage20 V VGSSGate-Source Voltage12 TJMaximum Junction Temperature175C TSTGStorage Temperature Range-55 to 175C ISDiode Continuous Forward Current TC=25C55A Mounted on Large Heat Sink IDP 300s Pulse Drain Current TestedTC=25C200A ID Continuous Drain Current(VGS=4.5V) TC=25C55 A TC=100C PDMaximum Power Dissipation TC=25C50 W TC=100C25 RqJCThermal Resistance-Junction to Case3C/W RqJAThermal Resistance-Junction to Ambient100C/W Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 49mJ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A NOV., G S D D S G RU2060L Electrical Characteristics (TC=25C Unless Otherwise Noted) SymbolParameterTest Condition RU2060L Unit Min.Typ.Max. Static Characteristics BVDSSDrain-Source Breakdown VoltageVGS=0V, IDS=250A20V IDSSZero Gate Voltage Drain Current VDS=20V, VGS=0V1 A TJ=125C30 VGS(th)Gate Threshold VoltageVDS=VGS, IDS=250A0.41V IGSSGate Leakage CurrentVGS=12V, VDS=0V100 nA RDS(ON) Drain-Source On-state Resistance VGS=4.5V, IDS=55A 3.54.5m VGS=2.5V, IDS=45A 4.56m Diode Characteristics VSD Diode Forward VoltageISD=55A, VGS=0V1.2V trrReverse Recovery Time ISD=55A, dlSD/dt=100A/s 27ns QrrReverse Recovery Charge13nC Dynamic Characteristics RGGate ResistanceVGS=0V,VDS=0V,F=1MHz0.8 CissInput CapacitanceVGS=0V, VDS=10V, Frequency=1.0MHz 790 pFCossOutput Capacitance195 CrssReverse Transfer Capacitance85 td(ON)Turn-on Delay Time VDD=10V,IDS=55A, VGEN=4.5V,RG=0.5 6 ns trTurn-on Rise Time8 td(OFF)Turn-off Delay Time19 tfTurn-off Fall Time13 Gate Charge Characteristics QgTotal Gate Charge VDS=16V, VGS=4.5V, IDS=55A 19 nCQgsGate-Source Charge6 QgdGate-Drain Charge5 Notes: Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Limited by TJmax, IAS =14A, VDD = 16V, RG = 50 , Starting TJ = 25C. Pulse test;Pulse width300s, duty cycle2%. Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A NOV., RU2060L Typical Characteristics Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A NOV., VGS=10V Ids=55A 100s 1ms 10ms DC RDS(ON) limited TC=25C Single Pulse Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse RJC=3C/W RU2060L Typical Characteristics Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A NOV., 1V 1.5V 2V Vgs=3.5,4.5,6V TJ=25C TJ=125C 4.5V 2.5V TJ=25C TJ=150C Ciss Coss Crss Frequency=1.0MHz VDS=16V IDS=55A RU2060L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ordering and Marking Information DeviceMarkingPackagePackagingQuantityReel SizeTape width RU2060LRU2060LTO252Tape&Reel25001316mm Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A NOV., RU2060L Package Information Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A NOV., TO252 1 1 2 1