微波射频器件介绍演示幻灯片.ppt

理理 工工 大大 学学 通通 信信 工工 程程 学学 院院卫星通信系微波通信教研室射频微电子学第第 次课次课2012.09.011一、放大器一、放大器 二、衰减器二、衰减器 三、倍频器三、倍频器 四、混频器四、混频器 五、五、VCO和分频器和分频器 六、开关六、开关 FREQUENCY DIVIDERS(PRESCALERS)&PHASE/FREQUENCY DETECTORSFREQUENCY MULTIPLIERS-ACTIVEMODULATORS-BI-PHASEMODULATORS-DIRECT QUADRATUREMODULATORS-VECTORPHASE SHIFTERS-AnalogPOWER DETECTORSVOLTAGE CONTROLLED OSCILLATORS*PHASE LOCKED OSCILLATORI/Q MIXERSPHASE SHIFTERS2HMC619LP5/619LP5EGaAs PHEMT MMICPOWER AMPLIFIER,DC-10 GHzP1dB Output Power:+27 dBmGain:11 dBOutput IP3:+37 dBmSupply Voltage:+12V 300 mA50 Ohm Matched Input/Output32 Lead 5x5mm Lead SMT Package:25mm2HMC619LP5/619LP5E放大器放大器 3HMC619LP5/619LP5E放大器放大器4GSM_PHS双模手机射频前端的关键技术研究与性能的优化双模手机射频前端的关键技术研究与性能的优化PAmodule收发芯片HMC619LP5/619LP5E放大器放大器5HMC462LP5/462LP5E放大器放大器Noise Figure:2.5 dB 10 GHzGain:13 dBP1dB Output Power:+14.5 dBm 10 GHzSelf-Biased:+5.0V 66 mA50 Ohm Matched Input/Output25 mm2 Leadless SMT PackageThe HMC462LP5&HMC462LP5E are GaAs MMICPHEMT Low Noise Distributed Amplifi ers in leadless5 x 5 mm surface mount packages which operatebetween 2 and 20 GHz.The self-biased amplifi erprovides 13 dB of gain,2.5 to 3.5 dB noise fi gure and+14.5 dBm of output power at 1 dB gain compressionwhile requiring only 66 mA from a single+5V supply.Gain fl atness is excellent from 6-18 GHz making theHMC462LP5&HMC462LP5E ideal for EW,ECMRADAR and test equipment applications.The widebandamplifi er I/Os are internally matched to 50 Ohmsand are internally DC blocked.6HMC462LP5/462LP5E放大器放大器7HMC462LP5/462LP5E放大器放大器8HMC273MS10G是宽带是宽带5位正电压控制的位正电压控制的GaAsIC数字衰减器，覆盖数字衰减器，覆盖0.73.7GHz，插，插入损耗为入损耗为2dB,衰减器的离散值为衰减器的离散值为1，2，4，8，16 dB，总衰减量为，总衰减量为31 dB。精确值为。精确值为0.5 dB，5位控制电压为触发电压为位控制电压为触发电压为0和和35伏，来选择每一个衰减状态，通过伏，来选择每一个衰减状态，通过5K欧欧姆外接电阻提供单电压姆外接电阻提供单电压35伏。伏。HMC273MS10G/273MS10GE数字衰减器数字衰减器9电气特性电气特性Vdd5VVctl0Vdd参数参数频率频率最小最小典型典型最大最大单位单位插入损耗插入损耗0.71.4GHz1.82.4dB1.42.3GHz2.12.7dB2.32.7GHz2.43dB2.73.7GHz2.83.5dB衰减范围衰减范围0.73.7GHz31dB回波损耗回波损耗0.71.4GHz1117dB1.42.7GHz1420dB2.73.7GHz1014dB衰减精度衰减精度0.35+3%衰减量衰减量dB输入功率输入功率0.1dB压缩点压缩点0.73.7GHz24dBm三阶交解点三阶交解点0.73.7GHz48ns开关特性开关特性0.73.7GHz560nsHMC273MS10G/273MS10GE数字衰减器数字衰减器10HMC273MS10G/273MS10GE数字衰减器数字衰减器控制电压输入控制电压输入衰减设置衰减设置V1 16dBV2 8dBV3 4dBV4 2dBV5 1dB高高高高高高高高高高插损插损高高高高高高高高低低1dB高高高高高高低低高高2dB高高高高低低高高高高4dB高高低低高高高高高高8dB低低高高高高高高高高16dB低低低低低低低低低低31dB11HMC307QS16G/307QS16GE数字衰减器数字衰减器1 dB LSB Steps to 31 dBSingle Control Line Per Bit+/-0.5 dB Typical Bit ErrorMiniature QSOP-16 Package:29.4 mm2The HMC307QS16G&HMC307QS16GE are broadband5-bit GaAs IC digital attenuators in 16 leadQSOP grounded base surface mount plastic packages.Covering DC to 4 GHz,the insertion loss isless then 2 dB typical.The attenuator bit values are1(LSB),2,4,8,and 16 dB for a total attenuation of31 dB.Attenuation accuracy is excellent at 0.5 dBtypical with an IIP3 of up to+44 dBm.Five bit controlvoltage inputs,toggled between 0 and-5V,are usedto select each attenuation state at less than 50 uAeach.A single Vee bias of-5V allows operation downto DC.This product is an excellent alternative to theHMC235QS16G.12HMC307QS16G/307QS16GE数字衰减器数字衰减器13PAmodule收发芯片HMC307QS16G/307QS16GE14四倍频芯片四倍频芯片HMC443LP4/443LP4E采用的是采用的是HITTITE 公司生产的集成四倍频芯片公司生产的集成四倍频芯片HMC443LP4/443LP4E 利用基于该芯利用基于该芯片所构成的倍频模块，可将频率合成器产生的点频片所构成的倍频模块，可将频率合成器产生的点频2.4GHz信号倍频到信号倍频到9.6GHz，以作，以作为转发器系统中上变频器的本振信号源。为转发器系统中上变频器的本振信号源。倍频器倍频器HMC443的技术参数的技术参数(Vdd=5V)典型值单位输入频率输入频率2.45 2.8GHz输出频率输出频率9.8 11.2GHz输入功率输入功率-15 +5dBm输出功率输出功率4dBm谐波抑制谐波抑制25dBc输入回波损耗输入回波损耗15dB输出回波损耗输出回波损耗8dB单边带相位噪声单边带相位噪声(偏移偏移100KHz处，输入为处，输入为0dBm)-142dBc/Hz供电电流供电电流52mA15 集成芯片集成芯片HMC443是采用是采用InGaP GaAs HBT 技术的宽带倍频器，当输入电压为技术的宽带倍频器，当输入电压为+5V 时，倍频器能提供时，倍频器能提供4dBm左右的输出功率，并且对温度、输入电压、输入功率的变化等左右的输出功率，并且对温度、输入电压、输入功率的变化等具有比较高的稳定性。与输出信号电平相比，倍频器对信号中出现的基波和不需要的奇具有比较高的稳定性。与输出信号电平相比，倍频器对信号中出现的基波和不需要的奇次谐波的抑制效果很好，大于次谐波的抑制效果很好，大于25dBc。同时。同时HMC443芯片具有良好的系统相位噪声性能，芯片具有良好的系统相位噪声性能，单边带相位噪声低，约为单边带相位噪声低，约为-142dBc/Hz在在100kHz 处。与传统的本振链路的设计制作相比，处。与传统的本振链路的设计制作相比，四倍频器芯片四倍频器芯片HMC443的使用能有效的减少毫米波本振倍频链路中器件的数量，极大的的使用能有效的减少毫米波本振倍频链路中器件的数量，极大的简化了工程设计与制作。简化了工程设计与制作。图4-4 倍频器HMC443外围电路图四倍频芯片四倍频芯片HMC443LP4/443LP4E16四倍频芯片四倍频芯片HMC443LP4/443LP4E 图图4-5 4-5 倍频器的倍频器的PCBPCB版图版图 图图4-6 4-6 倍频器模块实物图倍频器模块实物图17二二倍频器倍频器HMC448LC3BHMC448是是GaAs PHEMT技术宽带倍频器，当输入技术宽带倍频器，当输入0dBm时，在时，在2022 GHz范围内，倍频器提供范围内，倍频器提供11dBm的输出电平，比较低的相位噪声的输出电平，比较低的相位噪声-135 dBc/Hz在在100KHz处，帮助系统提供了良好的相位噪声性能，该处，帮助系统提供了良好的相位噪声性能，该器件消除了跳金线可以使用表贴技术安装，器件消除了跳金线可以使用表贴技术安装，混频器混频器HMC448技术参数技术参数Vdd5V1输入频率范围输入频率范围10111112.5单位单位2输出频率范围输出频率范围20222225GHz3输出功率输出功率911GHz4输出与基波隔离输出与基波隔离2415dB5输出输出3F0与基波隔离与基波隔离2525dB6输入回波损耗输入回波损耗107dB7输出回波损耗输出回波损耗610dB8单边相位噪声单边相位噪声-135-135dBc/Hz供电电流供电电流4848dBm18GaAs MMIC MIXER w/INTEGRATED LO AMPLIFIER,1.2-2.5 GHz 采用混频器采用混频器HMC422MS8是是GaAs MMIC双平衡混频器，这种混频器可以用于上下变双平衡混频器，这种混频器可以用于上下变频器具有集成本振放大器，混频器需要的电平为频器具有集成本振放大器，混频器需要的电平为0dBm，供电电压，供电电压3V，电流，电流30mA，混，混频器转换损失为频器转换损失为810.5 dB，HMC422MS8混频器混频器混频器混频器HMC422技术参数技术参数Vdd3V参数参数IF=100MHz LO=0dBm 单位单位1频率频率RF、LO1.22.5GHz2IFDC 1.0GHz3转换损失转换损失810.5dB4噪声系数噪声系数810.5dB5RF-LO隔离隔离30dB6LO-IF隔离隔离1520dB7IP315dB81dB压缩点输入压缩点输入8dBm19HMC422MS8混频器混频器20HMC422MS8混频器混频器21压控振荡器压控振荡器HMC513LP5 压控振荡器采用压控振荡器采用HITTITE公司的公司的HMC513LP5芯片，集成了谐振器、负阻器件、变容芯片，集成了谐振器、负阻器件、变容二极管、除二和四分频器，其输出功率为二极管、除二和四分频器，其输出功率为7dBm，输出频率，输出频率10.4311.46GHz相位噪相位噪声为声为-110dBc/Hz100KHz，输出为，输出为5.215.73GHz，输出为，输出为2.62.86GHz，调谐，调谐电压为电压为213V，电流，电流270mA,由于由于VCO的输出功率较低，故为保证有足够的功率，的输出功率较低，故为保证有足够的功率，在在VCO输出加一级放大器。输出频率和调谐电压的关系如图输出加一级放大器。输出频率和调谐电压的关系如图3，调谐灵敏度和调谐电，调谐灵敏度和调谐电压的关系如图压的关系如图4，不需要外部匹配器匹配，不需要外部匹配器匹配,压控振荡器是无引脚压控振荡器是无引脚QFN5X5mm表贴器件。表贴器件。HMC513LP5 图图3 输出输出频率和调谐电压的关系频率和调谐电压的关系图图4 调谐灵敏度和调谐电压的关系调谐灵敏度和调谐电压的关系22混频器混频器HMC513技术参数技术参数Vdd5V1频率范围频率范围10.4311.46单位单位2 2输出频率范围输出频率范围5.2155.73GHz3射频输出功率射频输出功率510GHz4 /2射频输出功率射频输出功率511dBm5 /4射频输出功率射频输出功率-10-4dBm6调谐电压调谐电压213V7电流电流275dB8二次谐波抑制二次谐波抑制15dBc9二次谐波抑制二次谐波抑制28dBc10输出回波损耗输出回波损耗2dB11压控斜率压控斜率Vtune=5V25MHz/V压控振荡器压控振荡器HMC513LP5 23HMC362S8G/362S8GE4分频器分频器Ultra Low SSB Phase Noise:-149 dBc/HzWide BandwidthOutput Power:-6 dBmSingle DC Supply:+5VS8G SMT PackageThe HMC362S8G&HMC362S8GE are low noiseDivide-by-4 Static Dividers with InGaP GaAs HBTtechnology in 8 lead surface mount plastic packages.This device operates from DC(with a square waveinput)to 12 GHz input frequency with a single+5.0VDC supply.The low additive SSB phase noise of-149dBc/Hz at 100 kHz offset helps the user maintain goodsystem noise performance.24HMC362S8G/362S8GE4分频器分频器25HMC362S8G/362S8GE4分频器分频器26HMC362S8G/362S8GE4分频器分频器27HMC493LP3/493LP3E VCOUltra Low SSB Phase Noise:-150 dBc/HzVery Wide BandwidthOutput Power:-4 dBmSingle DC Supply:+5V3x3 mm QFN SMT Package28HMC493LP3/493LP3E VCO29High RF Power Handling:+40 dBmHigh Third Order Intercept:+70 dBmSingle Positive Supply:+3 to+10 VdcLow Insertion Loss:0.4 to 0.6 dBUltra Small MSOP8G Package:14.8 mm2Included in the HMC-DK005 Designers KitThe HMC484MS8G&HMC484MS8GE are lowcostSPDT switches in 8-lead MSOPG packages foruse in transmit-receive applications which requirevery low distortion at high input signal power levels,through 10 watts(+40 dBm).The device can controlsignals from DC to 3.0 GHz.The design providesexceptional intermodulation performance;+70 dBmthird order intercept at+5 volt bias.RF1 and RF2are refl ective shorts when“OFF”.On-chip circuitryallows single positive supply operation from+3 Vdcto+10 Vdc at very low DC current with control inputscompatible with CMOS and most TTL logic families.HMC484MS8G/484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC-3.0 GHz单刀双掷开关单刀双掷开关30收发芯片HMC484MS8G/484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC-3.0 GHz31HMC484MS8G/484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC-3.0 GHz32HMC484MS8G/484MS8GEGaAs MMIC 10 WATT T/R SWITCHDC-3.0 GHz33HMC345LP3/345LP3E单刀丝掷开关单刀丝掷开关Broadband Performance:DC-8.0 GHzHigh Isolation:35 dB 6 GHzLow Insertion Loss:2.2 dB 6 GHzIntegrated Positive Supply 2:4 TTL Decoder3 x 3 mm SMT PackageThe HMC345LP3&HMC345LP3E are broadbandnon-refl ective GaAs MESFET SP4T switches in lowcost leadless surface mount packages.Covering DCto 8 GHz,this switch offers high isolation and lowinsertion loss.This switch also includes an on boardbinary decoder circuit which reduces the requiredlogic control lines to two.The switch operates using apositive control voltage of 0/+5V,and requires a fi xedbias of+5V.GaAs MMIC SP4T NON-REFLECTIVEPOSITIVE CONTROL SWITCH,DC*-8.0 GHz34HMC345LP3/345LP3E单刀丝掷开关单刀丝掷开关35HMC345LP3/345LP3E单刀丝掷开关单刀丝掷开关36HMC597LP4/597LP4ESiGe WIDEBAND DIRECTDEMODULATOR RFIC,100-4000 MHzHigh Linearity:+25 dBm IIP3&+60 dBm IIP2Low Noise Figure:15 dBHigh Integration:On-Chip RF Balun37HMC597LP4/597LP4E38HMC597LP4/597LP4E39HMC597LP4/597LP4E40HMC538LP4/538LP4E移相器移相器Available as Lead FreeWide Bandwidth:6-15 GHz600 Phase ShiftSingle Positive Voltage ControlQFN Leadless SMT Package,16 mm241HMC538LP4/538LP4E移相器移相器42收发芯片HMC538LP4/538LP4E移相器移相器43HMC600LP4/600LP4EWide Dynamic Range:up to 75 dBFlexible Supply Voltage:+2.7V to+5.5VPower-Down ModeExcellent Stability over TemperatureCompact 4x4mm Leadless SMT Package75 dB LOGARITHMICDETECTOR/CONTROLLER 50-4000 MHz44HMC600LP4/600LP4E45HMC600LP4/600LP4E46AD8367 500 MHz,Linear-in-dB VGA with AGC DetectorAGC放大器放大器Broad Range Analog Variable Gain2.5 dB to+42.5 dB3 dB Cutoff Frequency of 500 MHzGain Up and Gain Down ModesLinear-in-dB,Scaled 20 mV/dBResistive Ground Referenced InputNominal ZIN 200 On-Chip Square-Law DetectorSingle-Supply Operation:2.7 V to 5.5 VAPPLICATIONSCellular Base StationBroadband AccessPower Amplifier Control LoopsComplete,Linear IF AGC AmplifiersHigh-Speed Data I/O47AD8367 500 MHz,Linear-in-dB VGA with AGC DetectorAGC放大器放大器48AD8367 500 MHz,Linear-in-dB VGA with AGC DetectorAGC放大器放大器49Basic Connections for Voltage-ControlledGain ModeFigure 8.Basic Connections for AGC OperationAD8367 500 MHz,Linear-in-dB VGA with AGC DetectorAGC放大器放大器50Example of Using an External Detector to Form an AGC LoopAD8367 500 MHz,Linear-in-dB VGA with AGC DetectorAGC放大器放大器51AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator1 degree rms quadrature error 1.9 GHz 0.2 dB I/Q amplitude balance 1.9 GHz Broad frequency range:0.8 GHz to 2.5 GHz Sideband suppression:46 dBc 0.8 GHz Sideband suppression:36 dBc 1.9 GHz Modulation bandwidth:dc to 70 MHz 0 dBm output compression level 0.8 GHz Noise floor:147 dBm/Hz Single 2.7 V to 5.5 V supply Quiescent operating current:45 mA 52The AD8346 is a silicon RFIC I/Q modulator for use from 0.8 GHz to 2.5 GHz.Its excellent phase accuracy and amplitude balance allow high performance direct modulation to RF.The differential LO input is applied to a polyphase network phase splitter that provides accurate phase quadrature from 0.8 GHz to 2.5 GHz.Buffer amplifiers are inserted between two sections of the phase splitter to improve the signal-to-noise ratio.The I and Q outputs of the phase splitter drive the LO inputs of two Gilbert-cell mixers.Two differential V-to-I converters connected to the baseband inputs provide the baseband modulation signals for the mixers.The outputs of the two mixers are summed together at an amplifier which is designed to drive a 50 load.This quadrature modulator can be used as the transmit mod-ulator in digital systems such as PCS,DCS,GSM,CDMA,and ISM transceivers.The baseband quadrature inputs are directly modulated by the LO signal to produce various QPSK and QAM formats at the RF output.Additionally,this quadrature modulator can be used with direct digital synthesizers in hybrid phase-locked loops to generate signals over a wide frequency range with millihertz resolution.The AD8346 comes in a 16-lead TSSOP package,measuring 6.5 mm 5.1 mm 1.1 mm.AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator53AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator54Single Sideband(SSB)Output Power(POUT)vs.LO Frequency(FLO).I and Q inputs driven in quadrature at baseband frequency(FBB)=100 kHz with differential amplitude of 2.00 V p-p.AD8346 0.8 GHz to 2.5 GHz Quadrature Modulator55PLL Frequency Synthesizer ADF4106 芯片选择集成锁相环芯片芯片选择集成锁相环芯片ADF4106是美国是美国ADI公司最新生产的锁相环芯片，它具有较高的公司最新生产的锁相环芯片，它具有较高的工作频率，最高达到工作频率，最高达到6.0GHz，它主要应用于无线发射机和接收机中，为上下变频提供本，它主要应用于无线发射机和接收机中，为上下变频提供本振信号。该芯片主要由低噪声数字鉴相器、精确电荷泵、可编程参考分频器、以及可编程振信号。该芯片主要由低噪声数字鉴相器、精确电荷泵、可编程参考分频器、以及可编程A、B计数器及双模前置分频器（计数器及双模前置分频器（P/P1）等部件组成。数字鉴相器用来对）等部件组成。数字鉴相器用来对R计数器和计数器和N计计数器的输出相位进行比较，然后输出一个与二者相位误差成比例的误差电压。精确电荷泵数器的输出相位进行比较，然后输出一个与二者相位误差成比例的误差电压。精确电荷泵采用可编程电流设置完成输出。可编程参考分频器实际上是一个采用可编程电流设置完成输出。可编程参考分频器实际上是一个14bit的的R计数器，主要完计数器，主要完成对外部参考频率进行分频，分频比的范围是成对外部参考频率进行分频，分频比的范围是1至至16383，从而得到参考频率。可编程，从而得到参考频率。可编程A、B计数器及双模前置分频器（计数器及双模前置分频器（P/P1）共同完成主分频比）共同完成主分频比 N（N=BPA）,双模前置分频双模前置分频器（器（P/P1）也是可编程的，）也是可编程的，P的取值有几种模式：的取值有几种模式：8/9，16/17，32/33，64/65。图1044采用AD4106的频率合成器电路56 ADF4106内部结构图内部结构图PLL Frequency Synthesizer ADF4106 57与其他同类锁相环芯片相比较，与其他同类锁相环芯片相比较，ADF4106主要有以下几点优势：主要有以下几点优势：（1）鉴相器采用电荷泵式相位频率鉴相器（双）鉴相器采用电荷泵式相位频率鉴相器（双D鉴相），这是目前比较推鉴相），这是目前比较推荐使用的鉴相器，可以降低鉴相器输出的相位噪声，并使得鉴相器对于频差荐使用的鉴相器，可以降低鉴相器输出的相位噪声，并使得鉴相器对于频差和相差都敏感；和相差都敏感；（2）直接锁定频率上限高达）直接锁定频率上限高达6GHz。其他大部分锁相环芯片，其锁定频率。其他大部分锁相环芯片，其锁定频率上限大多是上限大多是3GHz左右。左右。ADF4106提高了近一倍；提高了近一倍；（3）采用低相噪设计，其归一化相位噪声底为）采用低相噪设计，其归一化相位噪声底为-219dbc/Hz。而且有详细。而且有详细的合成器输出噪声估算公式以及测试的性能指标，便于系统设计；的合成器输出噪声估算公式以及测试的性能指标，便于系统设计；PLL Frequency Synthesizer ADF4106 58PLL Frequency Synthesizer ADF4106 596061CABLE MODEM,CATV,DBS&VOIP SOLUTIONS,5-2150 MHZ62GSM_PHS双模手机射频前端的关键技术研究与性能的优化双模手机射频前端的关键技术研究与性能的优化PAmodule收发芯片63WIRELESSLAN,UWB,UNII&ISM SOLUTIONS,2.4,4.9,5.4,5.8&3-11 GHZ64BTS RECEIVER SOLUTIONS FEATURING HIGH IP3 MIXER65BTS RECEIVER SOLUTIONS FEATURING DUAL RFIC DOWNCONVERTER66CDMA/GSM REPEATER SOLUTIONS67汇报完毕请各位专家指正 谢谢！68