IBIS模型语法.doc
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1、Appendix A:IBIS Model Syntax6/2/24Roy LeventhalReference IBIS 3.2ContentsTable 1: General Rules9Format9File Names9Reserved Words9POWER9GND9NC9NA9Line Length9Comments9Keywords9Allowed Scaling Factor Prefixes9Tab characters9Temperature9Currents9Table 2: General Properties10IBIS Ver10Comment Char10File
2、 Name10File Rev10Date10Source10Notes10Copyright10Disclaimer10Table 3: Component Properties12Component12Si_location12Timing_location12Manufacturer12Voltage Range12Temperature Range12END12Table 4: Package and Pin Properties13Package13R_pkg13L_pkg13C_pkg13Pin13signal_name13model_name13R_pin13L_pin13C_p
3、in13Package Model15Define Package Model15Manufacturer19OEM19Description19Number of Pins19Pin Numbers19Len19L, R, C.19Fork19Endfork19Number Of Sections22Model Data22Resistance Matrix23Inductance Matrix23Banded_matrix23Sparse_matrix23Full_matrix23Capacitance Matrix27Row27Bandwidth27End Model Data27Pin
4、 Mapping28pulldown_ref:28pullup_ref:28gnd_clamp_ref:28power_clamp_ref:28Rac30Cac30Rgnd30Rpower30Diff Pin30inv_pin:30vdiff:30tdelay_typ:30tdelay_min:30Tdelay_max:30Series Pin Mapping33pin_2:33model_name:33funtion_table_group:33Series Switch Groups33On, Off33End Package Model33Table 5: V-I Behavioral
5、Properties36Model36Model_type36C_comp: Note 1*.36Polarity36Enable36Vinl36Vinh36On39Off39R Series39L Series39C Series39Rl Series39Rc Series39Lc Series39Series Current39Series MOSFET39Vds39Vol, Voh44Technology44Pulldown44Pullup44GND Clamp44POWER Clamp44Pullup Reference48Pulldown Reference48GND Clamp R
6、eference48POWER Clamp Reference48Model Selector49Model Spec51Vinh51Vinh+51Vinh-51Vinl+51Vinl-51S_overshoot_high51S_overshoot_low51D_overshoot_high51D_overshoot_low51D_overshoot_time51Pulse_high51Pulse_low51Pulse_time51Vmeas51Add Submodel54submodel_name54mode54Submodel54Submodel_type54Submodel Spec54
7、V_trigger_r54V_trigger_f54Off_delay54GND Pulse Table59POWER Pulse Table59TTgnd59TTpower59Table 6: V-T Behavioral Properties63Ramp63dV/dt_r63dV/dt_f63R_load63Vmeas63Cref63Rref63Vref63Rising Waveform &63Falling Waveform63R_fixture63C_fixture63L_fixture63V_fixture63V_fixture_min63V_fixture_max63R_dut63
8、C_dut63L_dut63Driver Schedule67Rise_on_dly67Rise_off_dly67Fall_on_dly67Fall_off_dly67Table 7: Board Properties69Begin Board Description69Manufacturer69Number of Pins69Pin List70Path Description70Len70L, R, C70Fork70Endfork70Pin70Node70Reference Designator Map75End Board Description75End75END75Acknow
9、ledgement:The text of the IBIS specification, v3.2, was used verbatim extensively to create this document.Purpose:This document was created to separate out syntax rules, file formatting and examples and make those subjects more accessible to the user. This author has added not much commentary. But,
10、the material of the IBIS spec has been reorganized and reformatted. The IBIS spec is organized around a set of Keywords and (in some cases) their subparameters. I have reorganized those keywords into a set of 7 tables as follows: Table 1: General Rules - reserved words, ASCII characters, etc. Table
11、2: General Properties - boilerplate. Table 3: Component Properties - supplier, voltage and temperature ranges. Table 4: Package and Pin Properties - connections and parasitics. Table 5: V-I Behavioral Properties - driver voltage-current capabilities, clamping, power bussing, model types, etc. Table
12、6: V-T Behavioral Properties - slew rates and switching speeds. Table 7: Electrical Board Description - abstracting a board as a component.Most of the above tables are split apart into sections or subtables so as to bring technical notes and examples into close association with the listed keywords a
13、nd examples.An industry committee created the IBIS specification over a period of years. It is still a work in progress undergoing continuing modification. As this author sees it, the specification is in need of organization and a roadmap to its information since disparate elements are mixed togethe
14、r and separated into unrelated sections and specific information is not easily accessible.This syntax guide is offered in the hope that it will aid the reader in understanding the IBIS specification. This guide is followed by an example of an IBIS model file used with the permission of TI semiconduc
15、tor.Table 1: General RulesKeywordSyntaxRulesNotesFormatASCII, case sensitive except for reserved words and keywords. No special non-DOS characters allowed.ASCII as defined in ANSI Standard X3.4-1986File NamesAll lower case, ending in .ibs extension for model files, .pkg extension for separate packag
16、e model files, and .ebd for electrical board description files. 8 characters max plus extensionReserved WordsPOWERUsed with power supply pinsGNDUsed with ground pinsNCNo-connect pinsNAUsed where data not availableLine Length80 characters maxCommentsDefault are lines that begin with “|” (pipe)Keyword
17、sMust be enclosed with square brackets and begin in column 1Underscores and spaces are equivalent in keywords. Spaces not allowed in subparameter names.Allowed Scaling Factor PrefixesTTeraParser assumes volts, amperes, ohms, farads, henries & seconds if not specifiedGGigaMMegakKilomMilliuMicronNanop
18、PicofFemto1.234e-12scientific notationTab charactersAllowed. But, to be avoidedTemperatureDegrees CelsiusCurrentsPositive when their direction is into the componentTable 2: General PropertiesKeywordSyntaxRulesNotesIBIS VerInforms parser of the IBIS template versionMust be first keyword. Can be prece
19、ded by comment linesExample #1Comment CharThe new character to be defined must be followed by the underscore character and the letters char. Ex.: |_char redundantly redefines the comment character to be the pipe character. The new comment character is in effect only following the Comment Char keywor
20、d.Following characters MAY NOT be used: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z a b c d e f g h i j k l m n o p q r s t u v w x y z 0 1 2 3 4 5 6 7 8 9 . _ / = + -File NameAll lower case, ending in .ibs extension for model files, .pkg extension for separate package model files, and .ebd
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- 关 键 词:
- IBIS 模型 语法
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